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A733Datasheet, Equivalent, Cross Reference SearchType Designator: A733Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.2WMaximum Collector-Base Voltage Vcb : 60VMaximum Collector-Emitter Voltage Vce : 50VMaximum Emitter-Base Voltage Veb : 5VMaximum Collector Current Ic max : 0.15AMax. Operating Junction Temperature (Tj): 150°CTransition Frequency (ft): 50MHzCollector Capacitance (Cc): 4.5pFForward Current Transfer Ratio (hFE), MIN: 120Noise Figure, dB: -Package: SOT23. A733Datasheet (PDF)1.1. Size:258K update2SA733(3CG733) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR用途:用于音频功率放大推动级/Purpose: Driver stage of AF power amplifier.特点:h 高、特性好/Features: High h and excellent h linearity.FEFE FE极限参数/Absolute Maximum Ratings(Ta=25℃)参数符号 数值 单位Symbol Rating UnitV -60 VCBOV -50 VCEOV -5.0 VEBOI -150 mA1.2. Size:706K update SEMICONDUCTOR 2SA733LT1Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTORPackage:SOT-23. Collector Current: Ic=150mAABSOLUTE MAXIMUM RATINGS at Ta=25℃Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 VCollector-Emitter Voltage Vceo -50 VEmitter-Base Voltage Vebo -5 VPIN: 1 2 3Collector Current Ic -1501.3. Size:47K philipsDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PA733PNP general purpose transistor1999 May 28Product specificationSupersedes data of 1998 Jul 21Philips Semiconductors Product specificationPNP general purpose transistor 2PA733FEATURES PINNING Low current (max.
100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter Gener1.4. Size:123K fairchildsemiSeptember 20092SA733PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.TO-9211. Collector 3.BaseAbsolute Maximum Ratings. TA=25°C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 V1.5. Size:41K fairchildsemiKSA733Low Frequency Amplifier Collector-Base Voltage: VCBO= -60V Complement to KSC945 Suffix -C means Center Collector (1. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage1.6.
Size:69K nec1.7. Size:125K samsungLow Frequency AmpIifier Collector-Base Voltage: VCBO= -60V Complement to KSC945TO-921. CollectorPNP EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25°C unless otherwise notedSymboI Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -150 mA1.8.
Size:218K utcUNISONIC TECHNOLOGIES CO., LTD2SA733 PNP SILICON TRANSISTORLOW FREQUENCY AMPLIFIERPNP EPITAXIAL SILICONTRANSISTOR? DESCRIPTIONThe UTC 2SA733 is a low frequency amplifier.? FEATURES. Collector-emitter voltage:BVCEO=-50V. Collector current up to -150mA.
High hFE linearity. Complimentary to 2SC945?
ORDERING INFORMATIONOrdering Number Pin AssignmentPackage1.9. Size:189K aukSTA733SemiconductorSemiconductorPNP Silicon TransistorDescription. General small signal amplifierFeatures.
Low collector saturation voltage: VCE(sat)=-0.3V(Max.). Low output capacitance: Cob=4pF(Typ.).
Complementary pair with STC945Ordering InformationType NO. Marking Package CodeSTA733 STA733 TO-92Outline Dimensions unit: mm3.45±0.14.1.10.
Size:414K secos2SA733-60 V, -150mAPNP Plastic Encapsulated TransistorElektronische BauelementeRoHS Compliant ProductA suffix of “-C” specifies halogen & lead-freeSOT-23FEATURESComplementary of the 2SC945ACollector to base voltage: -60VL33MARKINGTop View C B11 2Product Marking Code2K E2SA733 CSDH JF GCLASSIFICATION OF hFEProduct-Rank 2SA733-L1.11. Size:362K secosA733-0.1A, -60VPNP Plastic-Encapsulated TransistorElektronische BauelementeRoHS Compliant ProductA suffix of “-C” specifies halogen & lead-freeTO-92FEATURESPower DissipationG H1Emitter1112Collector222J3Base333CLASSIFICATION OF hFEA DMillimeterProduct-Rank A733-R A733-Q A733-P A733-KREF.BMin. Max.A 4.40 4.70Range1.12.
Size:222K cdilContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic PackageCSA733PNP SILICON PLANAR EPITAXIAL TRANSISTORLow Frequency AmplifierComplementary to CSC945DIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 –L 1.982 2.082ALL DIMENSIONS IN M.M.1 2 31 = EMITTER1.13. Size:43K kecSEMICONDUCTOR KTA733TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise: NF=1dB(Typ.). At f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTC945. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=21.14.
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Size:270K kecSEMICONDUCTOR KTA733BTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise: NF=1dB(Typ.). At f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTC945B.
GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta1.15. Size:390K htsemiA733TRANSISTOR (PNP)SOT-23FEATURECollector-Base Voltage 1. EMITTERComplement to C9453.
COLLECTORMAXIMUM RATINGS(TA=25? Unless otherwise noted)Symbol Parameter Value UnitsVCBO -60 VCollector-Base VoltageVCEO -50 VCollector-Emitter VoltageVEBO -5 VEmitter-Base VoltageIC Collector Current -Continuous -150 mAPC Collector Power Dissipation 201.16. Size:292K gsme?????????????Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA733MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25 )¦MAXIMUM RATINGS (Ta=25 )?????MAXIMUM RATINGS (Ta=25?)CHARACTERISTIC Symbol Rating Unit???????????Collector-Base VoltageVCBO -60 V1.17. Size:208K lgeA733(PNP)TO-92 Bipolar Transistors1. BASEFeaturesPower dissipationMAXIMUM RATINGS (TA=25? Unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -100 mAPC Collector Power Dissipation 250 mWDimensions i1.18. Size:180K lgeA733SOT-23 Transistor(PNP)1.
BASE SOT-232. COLLECTORFeaturesCollector-Base Voltage: VCBO=-60VComplement to C945MAXIMUM RATINGS(TA=25? Unless otherwise noted)Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO -60 VCollector-Base VoltageVCEO -50 VCollector-Emitter VoltageVEBO -5 VEmitter-Base VoltageIC Collector Current -Con1.19.
Size:1860K wietronA733LT1COLLECTORGeneral Purpose Transistor3PNP Silicon1BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO-60 VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current -Continuous ICmAdc-150THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnit(1)Total Device Dissipatio1.20. Size:428K willasFM120-MWILLASTHRUA733SOT-23 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGEPb Free ProduPackage outlineFeatures. Batch process design, excellent power dissipation offersbetter reverse leakage current and thermal resistance.SOD-123H. Low profile surface mounted application in order tooptimize b1.21. Size:50K hsmcSpec. No.: HE6507HI-SINCERITYIssued Date: 1992.12.16Revised Date: 2006.07.28MICROELECTRONICS CORP.Page No.: 1/5HSA733PNP Epitaxial Planar TransistorDescriptionThe HSA733 is designed for use in driver stage of AF amplifier applications.TO-92Absolute Maximum Ratings. Maximum TemperaturesStorage Temperature.1.22.
Size:257K cystekSpec. No.: C306A3Issued Date: 2003.07.14CYStech Electronics Corp.Revised Date: 2013.09.23Page No.: 1 / 7General Purpose PNP Epitaxial Planar TransistorBTA733A3Description. The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity. Complementary to BTC945A3.
Pb-free package1.23. Size:305K can-shengTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsA733A733A733 TRANSISTOR (PNP)A733TO-92FEATUREFEATUREFEATUREFEATUREPower dissipation 1.EMITTER2.COLLECTORMAXIMUM RATINGS (TA=25℃ unless otherwise noted)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS3 BASE1 2 31.24. Size:301K can-sheng 深圳市灿升实业发展有限公司ShenZhen CanSheng Industry Development Co.,Ltd. Www.szcansheng.comSOT-23 Plastic-Encapsulate TransistorsA733 TRANSISTOR (NPN)FEATURESComplimentary to C945MARKING:CSMAXIMUM RATINGS (TA=25℃ unless otherwise noted)Symbol Parameter Value Units(符号) (参数名称) (额定值) (单位)VCBO Collector-Base Volt1.25. Size:506K blue-rocket-elect2SA733M(BR3CG733M)Rev.C Feb.-2015 DATA SHEET描述 / DescriptionsSOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.特征 / Featuresh 高、特性好。FEHigh hFE and excellent hFE linearity.用途 / Applications用于音频功率放大推动级。Driver stage of AF power amplifier.内部等效电路 / Equivalent Circ1.26.
Size:350K firstsiliconSEMICONDUCTORFTA733BTECHNICAL DATAPNP TRANSISTORB CFEATUREExcellent hFE linearityLow noiseDIM MILLIMETERSComplementary to FTC945BA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (TA=25℃ unless otherwise noted)D 0.55 MAXE 1.00F 1.27Symbol Parameter Value UnitsG 0.85H 0.45VCBO Collector-Base Voltage -60 VHJ 14.00 + 0.50L 2.30F1.27. Size:1105K kexinSMD Type Trans s o sSMD Type TransiisttorrsPNP Transistors2SA733SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesCollector-Base Voltage: VCBO=-60V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -60 VCollector to emitter voltage VCEO -50 V1.28. Size:703K shenzhen-tuofeng-semiShenzhen Tuofeng Semiconductor Technology Co., LtdTO-92 Plastic-Encapsulate TransistorsTO-92A733 TRANSISTOR(PNP )1. EMITTERFEATUREPower dissipation2. COLLECTORMAXIMUM RATINGS. TA=25℃ unless otherwise noted3.
BASESymbol Parameter Value Units1 2 3-60 VVCBO Collector-Base VoltageVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VI.
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